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SILICON: Difference between revisions
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[http://xds.mpimf-heidelberg.mpg.de/html_doc/xds_parameters.html#SILICON= SILICON=] tells XDS what the absorption coefficient of the detector material is. | |||
[http://xds.mpimf-heidelberg.mpg.de/html_doc/xds_parameters.html#SILICON= SILICON=] tells XDS what the absorption coefficient of the detector material is. A more proper name would be SENSOR_ABSORPTION, but historically, silicon was the first sensor material. The absorption of the sensor material needs to be known for two reasons: | |||
# in case of oblique incidence of diffracted x-rays on the detector, the path through the detector's absorbing material is longer than for vertical incidence, so more x-rays are absorbed | # in case of oblique incidence of diffracted x-rays on the detector, the path through the detector's absorbing material is longer than for vertical incidence, so more x-rays are absorbed | ||
# in that situation, the center of gravity of the absorbed x-rays is not at the same position as for an infinitely thin detector, so a positional correction is required | # in that situation, the center of gravity of the absorbed x-rays is not at the same position as for an infinitely thin detector, so a positional correction is required | ||
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0.61992 20000 14.1798 15.466 | 0.61992 20000 14.1798 15.466 | ||
</pre> | </pre> | ||
=== See also === | |||
https://physics.nist.gov/PhysRefData/XrayMassCoef/tab4.html for e.g. CdTe . | |||