SILICON: Difference between revisions

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add CdTe under See also
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[http://xds.mpimf-heidelberg.mpg.de/html_doc/xds_parameters.html#SILICON= SILICON=] tells XDS what the absorption coefficient of the detector material is. This needs to be known for two reasons:
 
[http://xds.mpimf-heidelberg.mpg.de/html_doc/xds_parameters.html#SILICON= SILICON=] tells XDS what the absorption coefficient of the detector material is. A more proper name would be SENSOR_ABSORPTION, but historically, silicon was the first sensor material. The absorption of the sensor material needs to be known for two reasons:
# in case of oblique incidence of diffracted x-rays on the detector, the path through the detector's absorbing material is longer than for vertical incidence, so more x-rays are absorbed
# in case of oblique incidence of diffracted x-rays on the detector, the path through the detector's absorbing material is longer than for vertical incidence, so more x-rays are absorbed
# in that situation, the center of gravity of the absorbed x-rays is not at the same position as for an infinitely thin detector, so a positional correction is required
# in that situation, the center of gravity of the absorbed x-rays is not at the same position as for an infinitely thin detector, so a positional correction is required
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0.61992 20000 14.1798 15.466
0.61992 20000 14.1798 15.466
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=== See also ===
https://physics.nist.gov/PhysRefData/XrayMassCoef/tab4.html for e.g. CdTe .
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